Part Number: PBSS533PAS

Function: -30V, -3A, PNP Transistor

Package: SOT1061D Type

Manufacturer: NXP Semiconductors.

Image and Pinout:

 

Description

The PBSS533PAS is -30V, -3A, PNP low VCEsat (BISS) Transistor.

PNP low V CEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.

 

Features

1. Low collector-emitter saturation voltage VCEsat

2. High collector current capability IC and ICM

3. High collector current gain (hFE) at high IC

4. High efficiency due to less heat generation

5. Reduced Printed-Circuit Board (PCB) area requirements

6. Leadless small SMD plastic package with soldarable side pads

7. Exposed heat sink for excellent thermal and electrical conductivity

8. NPN complement : PBSS4330PAS

Applications:

1. Loadswitch

2. Battery-driven devices

3. Power management

4. Charging circuits

5. Power switches (e.g. motors, fans)

 

PBSS533PAS Datasheet PDF Download

Other data sheets are available within the file: PBSS533

Part Number: 2SA1968

Function: – 900 V, – 10 mA, PNP Transistor

Package: TO-220FI(LS) Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:

 

Description

This is NPN Triple Diffused Planar Silicon Transistor.

 

Features

1. High breakdown voltage (Vceo min = – 900V).

2. Small Cob(Cob typ = 2.2pF).

3. High reliability (Adoption of HVP process).

4. Package of full isolation type.

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 900 V

2. Collector to Emitter Voltage: Vceo = – 900 V

3. Emitter to Base Voltage: Vebo = – 7 V

4. Collector Current: Ic = – 10 mA

5. Total Dissipation : Pc = 2 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. High-Voltage Amplifier, High-Voltage Switching

 

2SA1968 Datasheet PDF Download

Other data sheets are available within the file: 2SA-1968, A1968