Part Number : 2SB1642
Function: -60V, -4A, PNP Triple Diffused Type Transistor
Package: TO-220 Type
Manufacturer: Toshiba
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Description
The B1642 is a high-power PNP silicon transistor in a TO-220F (or similar) package, designed especially for audio frequency output stages. It supports a collector current up to –4 A and a breakdown voltage of –60 V, and features low saturation voltage for efficient switching. It’s typically used in audio amplifiers, power amplifier stages, and complementary transistor pairs in push-pull outputs.
Features
- Collector–Emitter breakdown voltage VCEO = –60 V (minimum)
- Collector current (continuous) IC = –4 A
- Low saturation voltage VCE(sat) = –1.5 V (max) at IC = –2.5 A, IB = –0.25 A
- Wide DC current gain: hFE = 100 to 320 at moderate currents
- Transition frequency fT ≈ 9 MHz
- Collector power dissipation PC = 25 W (at case)
- Collector–Base voltage VCBO = –60 V
- Emitter–Base breakdown voltage VEBO = –7 V
- Capacitance (Cob): ~50 pF (VCB = –10 V, f = 1 MHz)
Absolute Maximum Ratings (Ta = 25 °C)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector–Base voltage | VCBO | –60 | V |
| Collector–Emitter voltage | VCEO | –60 | V |
| Emitter–Base voltage | VEBO | –7 | V |
| Collector current, continuous | IC | –4 | A |
| Base current, continuous | IB | –1 | A |
| Power dissipation (case) | PC | 25 | W |
| Maximum junction temperature | TJ | 150 | °C |
| Storage temperature | Tstg | –55 to +150 | °C |
Applications
- Output stage in audio power amplifiers (PNP side)
- Complementary transistor in push-pull amplifier topologies
- Driver stage in class AB amplifiers
- Power amplification for speaker drivers and stereo systems
- General PNP high current switching roles in audio circuits
Alternative / Equivalent Products
- 2SB1640 – a close PNP transistor variant with similar specs
- 2SB1667 – alternative PNP transistor in audio designs
- 2SA1943 (if complementary or higher voltage rating required)
- BD140 / BD139 (lower power but common PNP alternatives)
- MJE2955 – another PNP power transistor with somewhat higher voltage headroom




