Part Number: A684, 2SA684

Function: 50V, PNP Transistor

Package: TO-92 Type

Manufacturer: Panasonic

Images:

Description

A684 is -50V, -1A, Silicon PNP epitaxial planar type transistor.

A silicon PNP epitaxial planar type transistor refers to a specific type of PNP (Positive-Negative-Positive) bipolar junction transistor (BJT) that is constructed using an epitaxial planar technology on a silicon substrate.

1 The transistor follows the PNP configuration, which means it has a P-type semiconductor region sandwiched between two N-type regions. The transistor consists of three layers: the emitter (P-type), the base (N-type), and the collector (P-type).

2. PNP epitaxial planar type transistors find applications in various electronic circuits, including amplifiers, switches, voltage regulators, oscillators, and other applications that require amplification or signal switching.

Features:

• Complementary pair with 2SC1383 and 2SC1384

• Allowing supply with the radial taping

 

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 60 V

2. Collector to Emitter Voltage: Vceo = – 50 V

3. Emitter to Base Voltage: Vebo = – 5 V

4. Collector Current: Ic = – 1 A

5. Collector Dissipation: Pc = 1 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

A684 PDF Datasheet

Part Number: A1695, 2SA1695

Function: -140V, PNP Transistor

Package: TO-3P Type

Manufacturer: Allegro Micro Systems

Images:

Description

A1695 is -140V, -10A, Silicon PNP Epitaxial Planar Transistor.

Characteristics:

1. Current flow: When a small current is applied to the base terminal, it allows a much larger current to flow from the emitter to the collector. This is called amplification or gain, and it makes the PNP transistor useful as an electronic switch or amplifier.

2. Voltage levels: The voltage levels in a PNP transistor are opposite to those in an NPN transistor. In a NPN transistor, the base-emitter junction is forward-biased and the collector-base junction is reverse-biased.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 140 V

2. Collector to Emitter Voltage: Vceo = – 140 V

3. Emitter to Base Voltage: Vebo = – 6 V

4. Collector Current: Ic = – 10 A

5. Collector Dissipation : Pc = 100 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

A1695 PDF Datasheet