TIP145 Datasheet PDF – 60V, 10A, PNP Darlington Transistor

Part Number: TIP145

Function: 60V, 10A, COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR

Package: TO-247 Type

Manufacturer: STMicroelectronics

Image and Pinouts:

TIP145 datasheet

 

Description

The TIP145 is 60V, 10A, Complementary PNP Darlington Transistor.

The TIP140, TIP141 and TIP142 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration, mounted in TO-218 plastic package.

They are intented for use in power linear and switching applications.

The complementary PNP types are TIP145, TIP146 and TIP147 respectively.

The Darlington complementary transistor configuration consists of two BJTs connected in a way that the emitter of the first transistor is connected to the base of the second transistor, and the collector of the second transistor is connected to the collector of the first transistor. This creates a “Darlington pair” which acts as a single transistor with very high current gain, typically in the range of several thousand.

The Darlington configuration is used in applications where high current gain and high input impedance are required, such as in audio amplifiers, power regulators, and motor control circuits.

Features

1. TIP141, TIP142, TIP145 AND TIP147 ARE STMicroelectronics PREFERRED SALESTYPES

2. COMPLEMENTARY PNP – NPN DEVICES

3. MONOLITHIC DARLINGTON CONFIGURATION

4. INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

Other data sheets are available within the file:

TIP140, TIP141, TIP142, TIP146

 

TIP145 Datasheet PDF Download


TIP145 pdf

2SA1117 Datasheet PDF – 200V, 17A, PNP, Transistor, A1117

Part Number: 2SA1117

Function: -200V, -17A, PNP Transistor

Package: TO-3 Type

Manufacturer: Quanzhou Jinmei Electronic

Image and Pinouts:

2SA1117 datasheet

 

Description

This is -200V, -17A, Silicon PNP Power Transistor.

 

Features

1. With TO-3 package

2. High power dissipations

 

 

Absolute maximum ratings

1. VCBO, Collector-base voltage Open emitter : -200 V

2. VCEO, Collector-emitter voltage Open base : -200 V

3. VEBO, Emitter-base voltage Open collector : -6 V

4. IC, Collector current : -17 A

5. IB, Base current : -5 A

6. PC, Collector power dissipation TC=25℃ : 200 W

7. Tj, Junction temperature : 150 ℃

8. Tstg, Storage temperature : -65~150 ℃

 

 

Applications:

1. For power switching amplifier and general purpose applications

2. AUDIO POWER AMPLIFIER DC TO DC CONVERTER

 

 

Other data sheets are available within the file: A1117

2SA1117 Datasheet PDF Download

2SA1117 pdf