BDW74 Datasheet PDF – 45V, 8A, PNP Darlington Transistor

Part Number: BDW74

Function: -45V, -8A, PNP Transistor

Manufacturer: Bourns, Inc

Image and Pinouts:

BDW74 datasheet

 

Description

This is 45V, 8A, PNP SILICON POWER DARLINGTON Transistor.

Features

1. Designed for Complementary Use with BDW73, BDW73A, BDW73B, BDW73C and BDW73D

2. 80 W at 25°C Case Temperature

3. 8 A Continuous Collector Current

4. Minimum hFEof 750 at 3 V, 3 A

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 45V

2. Collector to Emitter Voltage: Vceo = – 45 V

3. Emitter to Base Voltage: Vebo = – 5 V

4. Collector Current: Ic = – 8 A

5. Collector Dissipation : Pc = 80 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

Other data sheets are available within the file: BDW74A, BDW74B, BDW74C, BDW74D

BDW74 Datasheet PDF Download


BDW74 pdf

2SA1442 Datasheet PDF – 60V, 7A, PNP Power Transistor

Part Number: 2SA1442

Function: -60V, -7A, PNP Transistor

Package: TO-200FA Type

Manufacturer: Inchange Semiconductor

Image and Pinouts:

2SA1442 datasheet

 

Description

This is 60V, 6A, Silicon PNP Power Transistor.

Features

1. Collector­Emitter Sustaining Voltage­ : VCEO(SUS)= ­60V(Min)

2. High DC Current Gain­ : hFE =  100(Min)@  (VCE= ­2V , Ic = ­1.5A)

3. Low Saturation V oltage­ : VCE(sat) = -0.3V(Max)@ (Ic=  ­4A, Ib= ­0.2A)

 

Absolute Maximum Ratings :

1. Collector-Base Voltage : VCBO = -100 V

2. Collector-Emitter Voltage : VCEO = -60 V

3. Emitter-Base Voltage : VEBO = -7.0 V

4. Collector Current-Continuous : IC = -7.0 A

5. Collector Current-Pulse : ICM = -14 A

 

Applications:

This type of power transistor is developed for high-speed switching and features a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators.

 

 

Other data sheets are available within the file: A1442

2SA1442 Datasheet PDF Download


2SA1442 pdf