Part Number: BUZ71A

Function: 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET

Package: TO-220AB Type

Manufacturer: Intersil

Image and Pinouts:

 

Description

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.

Features

1. 13A, 50V

2. rDS(ON)= 0.120Ω

3. SOA is Power Dissipation Limited

4. Nanosecond Switching Speeds

5. Linear Transfer Characteristics

6. High Input Impedance

7. Majority Carrier Device

8. Related Literature
– TB334 “Guidelines for Soldering Surface MountComponents to PC Boards”

Absolute Maximum Ratings :

1. Drain to Source Breakdown Voltage : VDS = 50 V

2. Drain to Gate Voltage (RGS = 20kΩ): VDGR = 50 V

3. Continuous Drain Current, TC = 55°C : ID = 13 A

4. Pulsed Drain Current : IDM = 48 A

5. Gate to Source Voltage : VGS = ±20 V

6. Maximum Power Dissipation : PD = 40 W

7. Single Pulse Avalanche Energy Rating : EAS = 100 mJ

BUZ71A Datasheet PDF Download

Other data sheets are available within the file: BUZ71