TTC004B Datasheet PDF – 160V, NPN Transistor

Part Number: TTC004B

Function: NPN Transistor / High collector voltage: VCEO = 160V (min)

Package: TO-126 Type

Manufacturer: Toshiba

Pinouts:

TTC004B datasheet

 

Description

This is Silicon NPN Epitaxial Type Transistor.

Features

(1) High collector voltage: VCEO = 160 V (min)

(2) Complementary to TTA004B

(3) Small collector output capacitance: C ob= 12 pF (typ.)

(4) High transition frequency: fT = 100 MHz (typ.)

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 160 V

2. Collector to Emitter Voltage: Vceo = 160 V

3. Emitter to Base Voltage: Vebo = 6 V

4. Collector Current: Ic = 1.5 A

5. Collector Dissipation : Pc = 10 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

 

TTC004B Datasheet PDF Download


TTC004B pdf

Other data sheets are available within the file: TTC004

2SC5801 Transistor – 5.5V, 0.1A, NPN ( Datasheet PDF )

Part Number: 2SC5801

Marking : E7

Function: 5.5V, 0.1A, NPN Transistor

Package: 3-Pin Lead-less minimold Type

Manufacturer: Renesas Electronics

Image and Pinouts:

2SC5801 datasheet

 

Description

THIS IS NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD.

Features

1. Low phase distortion, low voltage operation

2. Ideal for OSC applications

3. 3-pin lead-less minimold package

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 9 V

2. Collector to Emitter Voltage: Vceo = 5.5 V

3. Emitter to Base Voltage: Vebo = 1.5 V

4. Collector Current: Ic = 100 mA

5. Total Power Dissipation : Ptot = 140 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

 

 

2SC5801 Datasheet PDF Download


2SC5801 pdf

Other data sheets are available within the file: 2SC5801-T3, C5801, C5801-T3