Transistor

IRLML5203 Datasheet – P-Ch, (-)30V, MOSFET, Transistor

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Part Number: IRLML5203

Function: P-channel power MOSFET, 30V, 3A

Package: Micro3 Type

Manufacturer: International Rectifier

Pinouts:

IRLML5203 datasheet

Description

These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to
produce a HEXFET Power MOSFET with the industrys smallest footprint. This package, dubbed the Micro3TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.

Features

1. Ultra Low On-Resistance

2. P-Channel MOSFET

3. Surface Mount

4. Available in Tape & Reel

5. Low Gate Charge

Other data sheets are available within the file:

IRLML5203TRPBF, IRLML5203PbF

 

IRLML5203 Datasheet PDF Download


IRLML5203 pdf

G80N60UFD Datasheet PDF – 600V, Ultrafast IGBT – Fairchild

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Part Number: G80N60UFD

Function: Ultrafast IGBT ( Vces = 600V )

Package: TO-3P Type

Manufacturer: Fairchild Semiconductor

Image :

G80N60UFD image

 

Description

This is 600V, Ultrafast IGBT.

Fairchild’s UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and  switching losses.

The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.

 

Pinouts:

G80N60UFD datasheet pinout

Features

1. High speed switching

2. Low saturation voltage : VCE(sat)= 2.1 V @ IC = 40A

3. High input impedance

4. CO-PAK, IGBT with FRD : trr = 50ns (typ.)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 80 A

4. Maximum Power Dissipation: Pd = 195 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. AC & DC motor controls, general purpose inverters, robotics, and servo controls.

G80N60UFD Datasheet PDF Download

G80N60UFD pdf


 

Other data sheets are available within the file:  G80N60, SGH80N60UFD

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