11N60C3 PDF Datasheet – 650V, 11A, MOSFET, Transistor

This post explains for the MOSFET.

The Part Number is 11N60C3, SPP11N60C3.

The function of this semiconductor is 650V, 11A, MOSFET.

The package is TO-220FP, TO-262, TO-220 Type.

Manufacturer: Infineon Technologies

Preview images :

1 page
11N60C3 pdf pinout

Description

11N60C3 is 650V, 11A, Cool MOSFET, Power Transistor. “CoolMOS” is a brand name for a series of high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) devices developed and manufactured by Infineon Technologies. CoolMOS is known for its advanced technology and design features that make it suitable for a wide range of power electronics applications.

Features :

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• High peak current capability

• Improved transconductance

11N60C3 datasheet

Other data sheets are available within the file: SPP11N60C3, SPI11N60C3, SPA11N60C3,

Q67040-S4395, Q67042-S4403, Q67040-S4408

11N60C3 PDF Datasheet

H6NA80FI Transistor – 800V, 3.4A, MOSFET, STH6NA80FI

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: H6NA80FI

Function: N-Channel MOSFET ( 800V, 3.4A )

Pakcage : TO-247, ISOWATT218 Type

Manufacturer: ST Microelectronics

Images

H6NA80FI pdf pinout

Description

This is N-Channel 800V, 3.4A, Fast Power MOS Transistor.

H6NA80FI Features

1. TYPICAL RDS(on) = 1.8 Ω

2. AVALANCE RUGGED TECHNOLOGY

3. 100% AVALANCHE TESTED

4. REPETITIVE AVALANCHE DATA AT 100 °C

5. LOW GATE CHARGE

6. VERY HIGH CURRENT CAPABILITY

7. APPLICATION ORIENTED CHARACTERIZATION

H6NA80FI datasheet mosfet

Applications

1. HIGH CURRENT, HIGH SPEED SWITCHING

2. SOLENOID AND RELAY DRIVERS

3. REGULATORS

4. DC-DC & DC-AC CONVERTERS

5. MOTOR CONTROL, AUDIO AMPLIFIERS

6. AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 800 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 3.4 A

4. Power Dissipation : Ptot = 60 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -65 to +150 °C

 

H6NA80FI PDF Datasheet