Transistor

F540NS PDF Datasheet – 100V, 33A – HEXFET Power MOSFET

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This post explains for the MOSFET.

The Part Number is IRF540NS, IRF540NL.

The function of this semiconductor is 100V, 33A, Power MOSFET.

The package is D2Pak, TO-262 type

Manufacturer: International Rectifier

Preview images :F540NS pdf pinout

Description

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.  […]

F540NS datasheet mosfet

Features

1. Advanced Process Technology

2. Ultra Low On-Resistance

3. Dynamic dv/dt Rating

4. 175°C Operating Temperature

5. Fast Switching

6. Fully Avalanche Rated

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 100V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 33A

4. Total Power Dissipation: Pd = 130 W

5. Avalanche energy: Ear = 13 mJ

6. Channel temperature: Tch = 175 °C

7. Storage temperature: Tstg = -55 to +175 °C

 

F540NS PDF Datasheet

D2144 PDF Datasheet – 20V, 0.5A, NPN Transistor – Rohm

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This post explains for the transistor.

The Part Number is 2SD2144, 2SD2144K.

The function of this semiconductor is 20V, 0.5A, NPN Transistor.

Manufacturer: Rohm

Preview images:

D2144 pdf datasheet

Description

This is High-current Gain Medium Power Transistor (20V, 0.5A). D2144 is a type of bipolar junction transistor (BJT) that consists of two n-type semiconductor materials separated by a single p-type material.

Features

1. High DC current gain. hFE = 1200 (Typ.)

2. High emitter-base voltage. VEBO = 12V (Min.)

3. Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 25 V

2. Collector to Emitter Voltage: Vceo = 20 V

3. Emitter to Base Voltage: Vebo = 12 V

4. Collector Current: Ic = 0.5 A

5. Collector Dissipation : Pc = 0.2 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Structure:

1. Epitaxial planar type NPN silicon transistor

D2144 PDF Datasheet