08N80C3 Datasheet – 800V, CoolMOS Transistor – Infineon

This post describes for the MOSFET.

The Part Number is 08N80C3, SPP08N80C3.

The function of this semiconductor is 800V, CoolMOS Power Transistor.

The package is TO220-3 Type

The manufacturer of this part is Infineon Technologies.

See the preview image and the PDF file for more information.

08N80C3 pinout datasheet

Description

08N80C3 is 800V, CoolMOS Power Transistor.

An 800V CoolMOS power transistor is a specific type of power transistor that belongs to the CoolMOS family of products. CoolMOS is a brand name of power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) developed by Infineon Technologies.

The 800V designation indicates that the CoolMOS power transistor is designed to handle high voltage applications up to 800 volts. Power transistors in this voltage range are commonly used in various power electronics applications, including switch-mode power supplies, motor control, lighting, and industrial applications.

The CoolMOS technology is known for its high efficiency, low switching losses, and excellent performance at high frequencies. It utilizes advanced design techniques and optimized materials to achieve low conduction losses and high breakdown voltage ratings.

Features:

• New revolutionary high voltage technology

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC1) for target applications

• Pb-free lead plating; RoHS compliant

• Ultra low gate charge

• Ultra low effective capacitances

CoolMOSTM 800V designed for:

• Industrial application with high DC bulk voltage

• Switching Application (i.e. active clamp forward)

[…]

08N80C3 pdf transistor

08N80C3 Datasheet PDF

K2961 PDF Datasheet – 60V, 2A, MOSFET – 2SK2961 – Toshiba

This post explains for MOSFET.

The Part Number is K2961, 2SK2961.

The function of this semiconductor is 60V, 2A, N-Channel MOSFET.

The Package: TO-92MOD Type

Manufacturer: Toshiba Semiconductor

Preview images :K2961 pdf datasheet

 

Description

The K2961 is 60V, 2A, Silicon N Channel MOS Type Field Effect Transistor.

 

Features

1. Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.)

2. High forward transfer admittance : |Yfs| = 2.0 S (typ.)

3. Low leakage current : IDSS = 100 μA (VDS = 60 V)

4. Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) […]

K2961 pinout mosfet

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 2 A

4. Drain Power Dissipation: Pd = 0.9 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Application:

1. Relay Drive

2. Motor Drive and DC-DC Converter

 

K2961 PDF Datasheet