Transistor

FR3707Z Transistor – MOSFET, 30V, 56A ( IRFR3707Z )

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Part Number: FR3707Z, IRFR3707Z

Function: 30V, 56A, HEXFET POWER MOSFET

Package: D-Pak, I-Pak Type

Manufacturer: International Rectifier

Images:FR3707Z pdf transistor

Description

This is 30V, 9.5nC, 56A, HEXFET Power MOSFET.

HEXFET Power MOSFET is a brand name for a MOSFET transistor manufactured by International Rectifier (now part of Infineon Technologies). It is characterized by fast switching and low gate drive current.

This MOSFET can be applied up to 30 V between drain and source.

The total gate charge (Q_g) is the amount of charge required to fully charge the gate of the MOSFET. This is an important parameter that determines the switching speed and the requirements of the gate driver. The lower the value, the faster the switching and the lower the driver power requirement.

Benefits:

1. Very Low RDS(on) at 4.5V VGS

2. Ultra-Low Gate Impedance

3. Fully Characterized Avalanche Voltage and Current

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 56 A

4. Drain Power Dissipation: Pd = 50 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +175 °C

 

Applications:

1. High Frequency Synchronous Buck Converters for Computer Processor Power

2. High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use

 

FR3707Z Datasheet

J6920 Datasheet PDF – 800V, 20A, NPN Transistor, FJL6920

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Part Number: J6920, FJL6920

Function: 800V, 20A, NPN Transistor

Package: TO-264 Type

Manufacturer: Fairchild Semiconductor, ON Semiconductor

Images:J6920 pinout datasheet

Description

J6920 is 800V, 20A, NPN Triple Diffused Planar Silicon Transistor.

:

Features

1. High Breakdown Voltage : VCBO= 1700V (Min)

2. Low Saturation Voltage : VCE(sat) = 3V (Max)

3. High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance

 

J6920 pdf transistor

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1700 V

2. Collector to Emitter Voltage: Vceo = 800 V

3. Emitter to Base Voltage: Vebo = 6 V

4. Collector Current: Ic = 20 A

5. Collector Dissipation : Pc = 200 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. High Voltage Color Display Horizontal Deflection Output

J6920 Datasheet PDF

J6920 pdf