What is D13009K?

This is an NPN bipolar junction transistor that is a high voltage fast switching power device. It is widely employed for switching and amplification purposes. This component contains three terminals named base, collector, and emitter.

Part Number: 3DD13009K

Function: 400V, 12A, HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Package: TO-220, TO-3P Type

Manufacturer: JILIN SINO-MICROELECTRONICS

Images:

Description

This is 400V, 12A, NPN Power Transistor. The D13009K is an NPN transistor where electrons are the major charge carriers. It is important to note that these devices are called bipolar devices because both holes and electrons are responsible for the conductivity inside the transistor.

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MAIN CHARACTERISTICS

1. Collector Current : IC = 12A

2. Collector to Base Voltage : VCEO = 400V

3. Collector Dissipation : PC(TO-220C) = 100W

4. Collector Dissipation : PC(TO-3PB) = 120W

Applications

1. Energy-saving light

2. Electronic ballasts

3. High frequency switching power supply

4. High frequency power transform

5. Commonly power amplifier

Features

1. High breakdown voltage

2. High current capability

3. High switching speed

4. High reliability

5. RoHS product

 

D13009K PDF Datasheet

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Part Number: C829, 2SC829

Function: 20V, 30mA, Silicon NPN Transistor

Package: TO-92 Type

Manufacturer: Panasonic

Images:

1:Emitter 2:Collector 3:Base

Description

2SC829, C829 is Silicon NPN epitaxial planer type Transistor. For high-frequency amplification.

1. Current Amplification: NPN transistors are designed to amplify electrical current, and can be used in a wide range of electronic applications such as amplifiers, switches, and oscillators.

2. Forward Biased: In order to operate, the base-emitter junction of an NPN transistor must be forward biased, meaning that the base must be connected to a positive voltage relative to the emitter.

Features

1. Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios.

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 30 V

2. Collector to Emitter Voltage: Vceo = 20 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 30 mA

5. Collector Dissipation : Pc = 400 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

C829 PDF Datasheet