Transistor

MDF10N65B PDF Datasheet – 650V, 10A, N-Ch, MOSFET

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This post explains for the MOSFET.

The Part Number is MDF10N65B.

The function of this semiconductor is 650V, 10A, N-Channel MOSFET.

The package is TO-220F Type

Manufacturer: MagnaChip

Preview images :

MDF10N65B pinout mosfet

Description

The MDF10N65B MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. MDF10N65B is suitable device for SMPS, high Speed switching and general purpose applications.

Features

1. VDS = 650V

2. ID = 10.0A

3. RDS(ON) ≤ 1.0Ω @ VGS = 10V @ VGS = 10V

 

Applications:

1. Power Supply

2. PFC

3. High Current, High Speed Switching

 

MDF10N65B pdf datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 650 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 10 A

4. Allowable Power Dissipation: Pd = 47.7 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

MDF10N65B PDF Datasheet

13001 PDF Datasheet – 400V, 200mA, NPN Transistor

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Part Number: 13001

Function: 400V, 200mA, NPN Transistor

Package: TO-126 Type

Manufacturer: Elite

Images:

13001 transistor

This post explains for the semiconductor 13001.

See the preview image and the PDF file for more information.

13001 pinout

Description

13001 is 400V, 200mA, NPN Epitaxial Silicon Transistor.

Features

1. Collector-Emitter Voltage: VCEO= 400V

2. Collector Dissipation: PC(max)= 1000mW TO-126

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 600 V

2. Collector to Emitter Voltage: Vceo = 400 V

3. Emitter to Base Voltage: Vebo = 7 V

4. Collector Current: Ic = 200 mA

5. Collector Dissipation : Pc = 1000 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Electrical Characteristics (TA=25°C) :

Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-emitter Voltage Transition Frequency Fall Time Storage Time Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE ff tf ts Test Conditions. […]

 

13001 Datasheet

Similar features and reference parts

MJE13001

KSE13001