Part Number: 13001
Function: 400V, 200mA, NPN Transistor
Package: TO-126 Type
Manufacturer: Elite
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This post explains for the semiconductor 13001.
See the preview image and the PDF file for more information.
Description
13001 is 400V, 200mA, NPN Epitaxial Silicon Transistor.
Features
1. Collector-Emitter Voltage: VCEO= 400V
2. Collector Dissipation: PC(max)= 1000mW TO-126
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 600 V
2. Collector to Emitter Voltage: Vceo = 400 V
3. Emitter to Base Voltage: Vebo = 7 V
4. Collector Current: Ic = 200 mA
5. Collector Dissipation : Pc = 1000 mW
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Electrical Characteristics (TA=25°C) :
Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-emitter Voltage Transition Frequency Fall Time Storage Time Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE ff tf ts Test Conditions. […]
13001 Datasheet
Similar features and reference parts
MJE13001
KSE13001