Part Number: 13001
Function: 400V, 200mA, NPN Transistor
Package: TO-126 Type
Manufacturer: Elite
Images:
This post explains for the semiconductor 13001.
See the preview image and the PDF file for more information.
Description
13001 is 400V, 200mA, NPN Epitaxial Silicon Transistor.
A NPN transistor is a type of bipolar junction transistor (BJT) that consists of two n-type semiconductor materials separated by a single p-type material.
The NPN transistor is used to amplify or switch electronic signals and is widely used in many electronic circuits. It works by controlling the current flow between the collector and emitter terminals through the base terminal.
Features
1. Collector-Emitter Voltage: VCEO= 400V
2. Collector Dissipation: PC(max)= 1000mW TO-126
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 600 V
2. Collector to Emitter Voltage: Vceo = 400 V
3. Emitter to Base Voltage: Vebo = 7 V
4. Collector Current: Ic = 200 mA
5. Collector Dissipation : Pc = 1000 mW
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Electrical Characteristics (TA=25°C) :
Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-emitter Voltage Transition Frequency Fall Time Storage Time Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE ff tf ts Test Conditions. […]