13001 PDF Datasheet – 400V, 200mA, NPN Transistor

Part Number: 13001

Function: 400V, 200mA, NPN Transistor

Package: TO-126 Type

Manufacturer: Elite

Images:

13001 transistor

This post explains for the semiconductor 13001.

See the preview image and the PDF file for more information.

1 page
13001 image

Description

13001 is 400V, 200mA, NPN Epitaxial Silicon Transistor.

Features

1. Collector-Emitter Voltage: VCEO= 400V

2. Collector Dissipation: PC(max)= 1000mW TO-126

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 600 V

2. Collector to Emitter Voltage: Vceo = 400 V

3. Emitter to Base Voltage: Vebo = 7 V

4. Collector Current: Ic = 200 mA

5. Collector Dissipation : Pc = 1000 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Electrical Characteristics (TA=25°C) :

Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-emitter Voltage Transition Frequency Fall Time Storage Time Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE ff tf ts Test Conditions. […]

 

13001 Datasheet