1803DFX PDF – 700V, 10A, NPN Transistor – MD1803DFX

This post explains for the Transistor.

The Full Part Number is MD1803DFX.

The Marking Code is 1803DFX.

The package is ISOWATT218FX.

The function of this semiconductor is 700V, High voltage NPN Power Transistor.

The manufacturers of this product is STMicroelectronics.

See the preview image and the PDF file for more information.

Preview images :1803DFX pdf datasheet

Description

This is High voltage NPN Power transistor for standard definition CRT display.

The 1803DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage.

Features

1. State-of-the-art technology: – Diffused collector “enhanced generation”

2. More stable performance versus operating temperature variation

3. Low base drive requirement

4. Tighter hFE range at operating collector current

5. Fully insulated power package U.L. compliant

6. Integrated free wheeling diode

7. In compliance with the 2002/93/EC european directive

1803DFX pinout transistor

Absolute maximum ratings ( Tc=25°C )

1. Collector to Emitter Voltage: Vces = 1500 V

2. Collector to Emitter Voltage: Vceo = 700 V

3. Emitter to Base Voltage: Vebo = 10 V

4. Collector Current: Ic = 10 A

5. Collector Dissipation: Ptot = 57 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

Applications:

1. Horizontal deflection output for TV

1803DFX PDF Datasheet

7N65C PDF Datasheet – 650V, N-Ch, MOSFET – FQP7N65C

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: 7N65C, FQP7N65C

Function: 650V, 7A, N-Channel MOSFET

Package: TO-220, TO220F Type

Manufacturer: Fairchild Semiconductor

Images:

7N65C 650V MOSFET transistor

Description

7N65C is 650V, 7A, N-Channel MOSFET. 

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. […]

7N65C pdf mosfet

Features

1. 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V

2. Low gate charge ( typical 28 nC)

3. Low Crss ( typical 12 pF)

4. Fast switching

5. 100% avalanche tested

6. Improved dv/dt capability

7N65C datasheet fairchild

7N65C PDF Datasheet