Transistor

C4212 PDF – 300V, 200mA, NPN Transistor – Panasonic

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This post explains for the transistor.

The Part Number is C4212, 2SC4212.

The function of this semiconductor is 300V, 200mA, NPN Transistor.

The package is TO-126B Type

Manufacturer: Panasonic Semiconductor

Preview images :

C4212 pinout datasheet

Description

The C4212 is 300V, 200mA, NPN Transistor.

A silicon NPN triple diffusion planar type transistor refers to a specific type of NPN (Negative-Positive-Negative) bipolar junction transistor (BJT) constructed using silicon material and triple diffusion planar fabrication techniques. It is a three-terminal semiconductor device commonly used for amplification and switching applications in electronic circuits.

1. NPN BJT: The transistor consists of an N-type emitter, a P-type base, and an N-type collector. It operates by controlling the current flow between the collector and emitter terminals through the application of a voltage at the base terminal.

2. Silicon Planar Technology: The transistor is constructed using silicon material and planar fabrication techniques. Planar technology involves the creation of multiple layers of semiconductors, insulators, and conductors on a flat surface, resulting in improved performance and manufacturability.

3. Triple Diffusion Process: The triple diffusion process refers to the creation of multiple doped regions through successive diffusion steps in the semiconductor material. This process allows for precise control over the doping concentrations and locations, enhancing the performance characteristics of the transistor.

4. Amplification and Switching: The silicon NPN triple diffusion planar type transistor can be used for both amplification and switching purposes. It can amplify weak electrical signals and control the flow of current in electronic circuits.

Features:

• High collector to emitter voltage VCEO
• TO-126B package which requires no insulation plate for installation to the heat sink […]

C4212 pdf

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 350 V
2. Collector to Emitter Voltage: Vceo = 300 V
3. Emitter to Base Voltage: Vebo = 7.5 V
4. Collector Current: Ic = 200 mA
5. Collector Dissipation: Pc = 1.2 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. For color TV horizontal deflection driver

C4212 Datasheet

B1238 PDF – Power PNP Transistor (-80V, -0.7A) – Rohm

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This post explains for the transistor.

The Part Number is B1238, 2SB1238.

The function of this transistor is -80V, -0.7A, PNP Transistor.

Manufacturer: Rohm

Preview images :

B1238 pinout datasheet

Description

A PNP medium power transistor is a specific type of PNP (Positive-Negative-Positive) bipolar junction transistor (BJT) designed to handle moderate power levels. It is commonly used in electronic circuits where moderate power amplification or switching capabilities are required.

PNP medium power transistors find applications in a wide range of electronic circuits, including audio amplifiers, power supply circuits, motor control circuits, voltage regulators, and general-purpose amplification and switching circuits.

Features:

1. PNP BJT: The transistor is of PNP polarity, which means it has an N-type semiconductor material as the base and two P-type semiconductor regions as the emitter and collector.

2. Medium Power Handling: The PNP medium power transistor is designed to handle power levels that are higher than low-power transistors but lower than high-power transistors. The exact power rating may vary depending on the specific transistor model.

3. Voltage and Current Ratings: The transistor will have specified voltage and current ratings that indicate the maximum voltage and current it can safely handle without exceeding its limits. These ratings typically include the maximum collector-base voltage (Vcb), maximum collector-emitter voltage (Vce), and maximum collector current (Ic).

4. Current Gain: The current gain, also known as the DC current gain or hFE, represents the amplification capability of the transistor. A higher current gain allows for smaller input currents to control larger output currents.

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B1238 pdf

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = -80V
2. Collector to Emitter Voltage: Vceo = -80V
3. Emitter to Base Voltage: Vebo = -5V
4. Collector Current: Ic = -0.7A
5. Collector Dissipation: Pc = 1W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

B1238 Datasheet