This post explains for the MOSFET MDF11N60.

The Part Number is MDF11N60TH.

The function of this transistor is N-Channel MOSFET, 600V.

The Package is TO-220F Type.

Manufacturer: MagnaChip

Preview images :

Description

The MDF11N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF11N60 is suitable device for SMPS, high Speed switching and general purpose applications.

Let’s break down the specifications:

1. Voltage Rating: The MOSFET has a maximum voltage rating of 600V, indicating it can handle a maximum voltage of 600V without the risk of damage. This voltage rating is significant for applications that require high-voltage operation, such as power supplies, motor control, inverters, and industrial systems.

2. Current Rating: The MOSFET has a maximum current rating of 11A, specifying the maximum continuous current that can flow through the transistor without exceeding its current handling capacity. This current rating is important for applications that require high-current operation, such as power electronics, motor drives, and other systems with significant power requirements.

 

N-channel MOSFETs are widely used in various power electronics applications due to their high voltage-handling capabilities, low on-resistance (RDS(on)), and fast switching performance. They provide efficient control and switching of high voltages and currents.

Features:

1. VDS = 600V

2. VDS = 660V @ Tjmax

3. ID = 11A @ VGS = 10V

4. RDS(ON) ≤ 0.55Ω @ VGS = 10V

 

Applications:

1. Power Supply

2. PFC

3. High Current, High Speed Switching

MDF11N60 PDF Datasheet

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: MDF11N65B

Function: N-Channel MOSFET, 650V, 12A

Package: TO-220F type

Manufacturer: MagnaChip

Description

These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.

Features

1. Drain to source voltage : VDS = 650V

2. Drain current: ID = 12A @ VGS = 10V

3. RDS(ON) ≤ 0.65Ω @ VGS = 10V

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 650 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 12 A

4. Drain power dissipation : PD = 49.6 W

5. Single pulse avalanche energy : Eas = 750 mJ

6. Repetitive avalanche energy : Ear = 18.1 mJ

7. Channel temperature: Tch = -55 to +150 °C

8. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Power Supply

2. PFC

3. High Current, High Speed Switching

MDF11N65B PDF Datasheet