Transistor archives - Page 468 of 2673

Description

This is 160V, 1.5A, Silicon NPN Epitaxial Transistor.

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to base voltage : VCBO = 180 V

2. Collector to emitter voltage : VCEO = 160 V

3. Emitter to base voltage : VEBO = 5V

4. Collector current IC = 1.5 A

5. Collector peak current : IC(peak) = 3A

Pinout

Application:

1. Low frequency power amplifier complementary pair with 2SB649 / 2SB649A

Part Number: CEP6060R

Description

60V, 60A, N-Channel FET

Package: TO-220, TO-263 Type

Manufacturer: Chino-Excel Technology

Image and Pinouts:

This is 60V, 60A, N-Channel Enhancement Mode Field Effect Transistor.

1. 60V , 60A , RDS(ON)=25m @VGS=10V.

2. Super high dense cell design for extremely low RDS(ON).

3. High power and current handling capability.

4. Lead free product is acquired

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 50 A

4. Maximum Power Dissipation: Pd = 88 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C