Transistor

51N25 Datasheet PDF – FDPF51N25, N-Ch, MOSFET

Posted on by pinout

Part Number: 51N25

Function: N-Channel UniFET MOSFET / 250V, 51A, 60mOhm

Package: TO-220F Type

Manufacturer: Fairchild Semiconductor

Image:

51N25 image, FDPF 51N25

 

Description

This is 250V, 51A, N-Channel MOSFET.

UniFET MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Image and Pinouts:

51N25 datasheet pinout

Features

1. RDS(on) = 48 mΩ (Typ.) @ VGS = 10 V, ID = 25.5 A

2. Low Gate Charge (Typ. 55 nC)

3. Low Crss (Typ. 63 pF)

Applications:

1. PDP TV

2. Lighting

3. Uninterruptible Power Supply

4. AC-DC Power Supply

51N25 Datasheet PDF Download

51N25 pdf

Other data sheets are available within the file:

FDP51N25, FDPF51N25, FDPF51N25RDYU, FDPF51N25YDTU

IRFP048R Datasheet PDF – 60V, 70A, HEXFET Power MOSFET

Posted on by pinout

Part Number: IRFP048R

Function: 60V, 70A, MOSFET

Package: TO-247AC Type

Manufacturer: International Rectifier

Image and Pinouts:

IRFP048R mosfet transistor

 

Description

This is 60V, 70A, HEXFET Power MOSFET.

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

 

Features

1. Dynamic dV/dt rating
2. Isolated central mounting hole
3. 175 °C operating temperature
4. Ease of paralleling
5. Simple drive requirements

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 70 A

4. Power Dissipation: Pd = 190 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

 

Other data sheets are available within the file: IRFP048RPbF, SiHFP048R, SiHFP048R-E3

IRFP048R Datasheet PDF Download

IRFP048R pdf