13007B Datasheet – BVceo=400V, 8A, NPN Transistor ( PDF )

This post describes for the Bridge Diode 13007B.

The Part Number is TS13007B, TS13007BCZC0.

The function of this semiconductor is High Voltage NPN Transistor.

The manufacturer of this part is Taiwan Semiconductor.

Image

13007B transistor pinout

Description

This is 400V, 8A, High Voltage NPN Transistor.

Features

1. High Voltage
2. High Speed Switching

Structure :

1. Silicon Triple Diffused Type
2. NPN Silicon Transistor

 

Pinout

13007B pdf block diagram

PRODUCT SUMMARY

1. BVCEO : 400V
2. BVCBO : 700V
3. IC : 8A
4. VCE(SAT) : 3V @ IC / IB = 8A / 2A

 

Absolute Maximum Rating

1. Collector-Base Voltage : VCBO 700V V
2. Collector-Emitter Voltage : VCEO 400V V
3. Emitter-Base Voltage : VEBO 9 V

13007B Datasheet


 

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D1432 Transistor – 600V, 6A, NPN, 2D1432 ( Datasheet PDF )

Part Number: D1432

Function: 600V, 6A, NPN Transistor

Package: TO-3PH Type

Manufacturer: SavantIC Semiconductor

Image and Pinouts:

D1432 datasheet

 

Description

This is 600V, 6A, Silicon NPN Power Transistor.

Features

1. With TO-3PH package

2. High voltage ,high speed

3. Low collector saturation voltage

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1500 V

2. Collector to Emitter Voltage: Vceo = 600 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 6 A

5. Collector Dissipation : Pc = 80 W ( Tc=25°C )

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. Designed for use in TV and CRT display horizontal output

 

D1432 Datasheet PDF Download


D1432 pdf

Other data sheets are available within the file: 2SD1432