Part Number: ZXMN3A02N8

Device Marking : ZXMN3A02

Function: 30V, 9A, N-Ch, MOSFET

Package: SO 8 Pin Type

Manufacturer: Zetex (Diodes)

Image and Pinouts:

 

Description

This is 30V, 9A, N-CHANNEL ENHANCEMENT MODE MOSFET.

This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

Features

1. Low on-resistance
2. Fast switching speed
3. Low threshold
4. Low gate drive
5. Low profile SOIC package
6. V(br)DSS= 30V, Rds(ON)= 0.025Ohm,  Id= 9.0A

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 9 A
4. Drain Power Dissipation: Pd = 1.56 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C

Applications

1. Disconnect switches
2. Motor control

Other data sheets are available within the file: ZXMN3A02N8TA, ZXMN3A02N8TC, ZXMN3A02X8

ZXMN3A02N8 Datasheet PDF

Part Number: 86T02GH, AP86T02GH

Function: 25V, 75A, N-Channel Power MOSFET

Package: TO-252(H), TO-251(J) Type

Manufacturer: Advanced Power Electronics Corp

Image:

Description

This is N-Channel Enhancement Mode Power MOSFET.

The 86T02GH is from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.

The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version(AP86T02GJ) is available for low-profile applications.

 

Pinouts:

 

Features

1. Simple Drive Requirement
2. Low On-resistance
3. Fast Switching Characteristic
4. RoHS Compliant

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 25 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 75 A
4. Allowable Power Dissipation: Pd = 75 W
5. Channel temperature: Tch = 175 °C
6. Storage temperature: Tstg = -55 to +175 °C

86T02GH Datasheet PDF

 

Other data sheets are available within the file: AP86T02GH, AP86T02J-HF

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