Transistor

SVD5N60F Datasheet – 5A, 600V, N-Ch, MOSFET ( PDF )

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Part Number: SVD5N60F

Function : 5A, 600V N-CHANNEL MOSFET

Package: TO-220F-3L, TO-220-3L type

Manufacturer: Silan Microelectronics

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SVD5N60F datasheet MOSFET

Description

 

SVD5N60T / SVD5N60F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.

Pinout

SVD5N60F pinout

 

Features

1. 5A,600V,RDS(on)（typ）=1.7Ω@VGS=10V
2. Low gate charge
3. Low Crss
4. Fast switching
5. Improved dv/dt capability

SVD5N60F Datasheet


 

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D1302 Datasheet – 20V, 0.5A, NPN Transistor – Panasonic

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Part Number: D1302, 2SD1302

Function: 20V, 0.5A, Silicon NPN Transistor

Package: TO-92 type

Manufacturer: Panasonic Corporation

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D1302 datasheet transistor

Description

This is Silicon NPN epitaxial planar type Transistor.

Features

1. Low collector-emiiter saturation voltage Vce(sat)
2. Low ON resistance Ron
3. High forward current transfer ratio hfe

Pinouts

D1302 pinout

Absolute Maximum Ratings Ta = 25°C

1. Collector-base voltage (Emitter open) : VCBO = 25 V
2. Collector-emitter voltage (Base open) : VCEO = 20 V
3. Emitter-base voltage (Collector open) : VEBO = 12 V
4. Collector current : IC = 0.5 A
5. Peak collector current : ICP = 1 A
6. Collector power dissipation : PC = 600 mW
7. Junction temperature : Tj = 150 °C

Applications:

1. For low-voltage output amplification
2. For muting
3. For DC-DC converter

 

D1302 Datasheet PDF Download