MDD1654 Datasheet PDF – 30V, 55A, N-Ch, MOSFET

Part Number: MDD1654

Function: Single N-channel Trench MOSFET. 30V, 55A, 6.0mΩ.

Package: TO-252 Type

Manufacturer: MagnaChip

Image:

MDD1654 datasheet mosfet

Description

The MDD1654 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1654 is suitable device for PWM, Load Switching and general purpose applications.

Features

1. VDS = 30V
2. ID = 55A @VGS = 10V
3. RDS(ON)
(1) < 6.0m @VGS = 10V
(2) < 9.5m @VGS = 4.5V

Absolute Maximum Ratings (Tc = 25°C)

1. Drain-Source Voltage : VDSS = 30 V
2. Gate-Source Voltage : VGSS = ±20 V
3. Continuous Drain Current : Id = 55 A
4. Pulsed Drain Current : IDM = 150 A
5. Power Dissipation: Pd = 29 W
6. Single Pulse Avalanche Energy : EAS = 45 mJ
7. Junction and Storage Temperature Range : TJ, Tstg = -55~150°C

 

Other data sheets are available within the file: D1654

MDD1654 Datasheet PDF

MDD1654 pdf


 

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D2025 Datasheet PDF – 100V, 8A, NPN Transistor – Rohm

Part Number: D2025

Function: 8A, 100V, NPN Transistor

Package: TO-220FP Type

Manufacturer: Rohm

Image:
D2025 datasheet

Description

The D2025 is 100V, 8A, NPN Power Transistor. 

Features

1. Darlington connection for high DC current gain

2. Built-in resistor between base and emitter

3. Bulit-in damper diode

4. Complements the 2SB1344

Pinouts

D2025 pinout transistor

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 100 V

2. Collector to Emitter Voltage: Vceo = 100 V

3. Emitter to Base Voltage: Vebo = 7 V

4. Collector Current: Ic = 8 A (DC)

5. Total Dissipation : Pc = 2W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Other data sheets are available within the file: 2SD2025

D2025 Datasheet PDF

D2025 pdf


 

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