Transistor

K1165 Datasheet PDF – 450V, 12A, N-Ch, MOSFET

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Part Number: K1165

Function: 12A, 450V, Silicon N-Channel MOSFET

Package: TO-3P Type

Manufacturer: Hitachi ( Renesas Electronics )

Image and Pinouts:

K1165 datasheet

Description

This is 12A, 450V, N-Channel MOSFET.

Features

1. Low on-resistance
2. High speed switching
3. Low drive current
4. No secondary breakdown
5. Suitable for switching regulator and DC-DC converter

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 450 V
2. Gate to source voltage: VGSS = ±30 V
3. Drain current: ID = 12 A
4. Drain peak current : ID(pulse) = 48 A
5. Body to drain diode reverse drain current : IDR = 12 A
6. Channel dissipation: Pch = 100 W
7. Channel temperature: Tch = 150 °C
8. Storage temperature: Tstg = -55 to +150 °C

components

Applications

1. High speed power switching

Other data sheets are available within the file: 2SK1165, 2SK1166, K1166

K1165 Datasheet PDF Download


K1165 pdf

2SC3089 Datasheet PDF – 800V, 7A, NPN Transistor

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Part Number: 2SC3089

Function: 7A, 800V, NPN Transistor

Package: TO-3PN Type

Manufacturer: SavantIC Semiconductor

Image and Pinouts:

2SC3089 datasheet

Description

This is 7A, 800V, Silicon NPN Power Transistor.

Features

1. With TO-3PN package
2. High breakdown voltage (VCBO ≥ 800V)
3. Fast switching speed
4. Wide ASO
5. Safe Operating Area

Absolute maximum ratings (Ta=25°C)

1. Collector-base voltage : VCBO = 800 V
2. Collector-emitter voltage : VCEO =  500 V
3. Emitter-base voltage : VEBO = 7 V
4. Collector current : IC = 7 A
5. Collector current-peak : ICM = 14 A
6. Base current : IB = 3 A
7. Collector power dissipation : PC = 2.5 W
8. Junction temperature : Tj  = 150°C
9. Storage temperature: Tstg = -55~150°C

Application

1. Switching Regulator

Other data sheets are available within the file: C3089

2SC3089 Datasheet PDF Download


2SC3089 pdf