Transistor

J6810 PDF Datasheet – 750V, 10A, NPN Transistor, TO-3PF

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Part Number: J6810

Function: 750V, 10A, NPN Transistor

Package: TO-3PF Type

Manufacturer: Fairchild Semiconductor

Images:J6810 pdf pinout

Description

The J6810 is 750V, 10A, NPN Triple Diffused Planar Silicon Transistor.

Characteristics of NPN Transistors

1. Forward Biased: In order to operate, the base-emitter junction of an NPN transistor must be forward biased, meaning that the base must be connected to a positive voltage relative to the emitter.

2. High Input Impedance: NPN transistors have a high input impedance, which means that they are less likely to draw current from the input source, and are therefore less likely to cause a drop in voltage across the source.

3. Inverted Output: NPN transistors are known for producing an inverted output relative to their input. That is, if the input signal is high, the output signal will be low, and vice versa. This behavior is due to the way the transistor is designed and is an important characteristic for many electronic applications.

 

Features :

• High Collector-Base Breakdown Voltage : BVCBO = 1500V

• High Switching Speed : tF(typ.) =0.1µs

• For Color Monitor

J6810 datasheet fairchild

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1500 V

2. Collector to Emitter Voltage: Vceo = 750 V

3. Emitter to Base Voltage: Vebo = 6 V

4. Collector Current: Ic = 10 A

5. Collector Dissipation: Pc = 60 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Application:

1. High Voltage Color Display Horizontal Deflection Output

Other data sheets are available within the file: FJAF6810

J6810 PDF Datasheet

K4108 MOSFET – 500V, 20A, Transistor, N-Ch, PDF, 2SK4108

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Part Number: K4108, 2SK4108

Function: 500V, 20A, MOSFET

Package: TO-3P Type

Manufacturer: Toshiba Semiconductor

Images:K4108 pdf pinout

Description

The K4108 is 500V, 20A, Silicon N-Channel MOS Type Field Effect Transistor. This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

1. Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.)

2. High forward transfer admittance : |Yfs| = 14 S (typ.)

3. Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)

4. Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

K4108 datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 20 A

4. Drain Power Dissipation: Pd = 150 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

 

Applications:

1. Switching Regulator

 

K4108 PDF Datasheet