Part Number: K4108, 2SK4108
Function: 500V, 20A, MOSFET
Package: TO-3P Type
Manufacturer: Toshiba Semiconductor
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Description
The K4108 is 500V, 20A, Silicon N-Channel MOS Type Field Effect Transistor. This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.
When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.
N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.
Features
1. Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.)
2. High forward transfer admittance : |Yfs| = 14 S (typ.)
3. Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
4. Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 500 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 20 A
4. Drain Power Dissipation: Pd = 150 W (Tc = 25°C)
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Switching Regulator