20N60A4D Datasheet – 600V, 70A, N-channel IGBT ( PDF )

This is one of the transistor types.

The IGBT is insulated-gate bipolar transistor.

Part Number: 20N60A4D, HGTG20N60A4D

Function: 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Package: TO-247 Type

Manufacturer: Fairchild


20N60A4D image


The 20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 °C and 150 °C.  The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372.

20N60A4D Pinout

20N60A4D datasheet pinout


• >100kHz Operation At 390V, 20A

• 200kHz Operation At 390V, 12A

• 600V Switching SOA Capability

• Low Conduction Loss

20N60A4D Datasheet


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