Part Number: 2SC1947
Function: 17V, 1A, RF Power NPN Transistor
Package: TO-39, T-8E Type
Manufacturer: MITSUBISHI ELECTRIC
2SC1947 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers
1. High power gain : Gpe > 10.7dB @ Vcc=13.5V, Po=3.5W, f=175MHz
2. TO-39 metal seeled package for high reliability.
3. Emitter electrode is connected electrically to the case
Absoulte maximum ratings ( Tc = 25’C )
1. Collector to base voltage : Vcbo = 35 V
2. Emitter to base voltage : Vebo = 4 V
3. Collector to emitter voltage : Vceo = 17 V
4. Collector Current: Ic = 1 A
5. Junction dissipation : Pc = 10 W
1. 1 to 3 watt power amplifiers in VHF band mobile radio applications.
Other data sheets are available within the file: C1947