2SC3709 Datasheet – Vceo=50V, NPN Transistor – Toshiba

Part Number: 2SC3709

Function: Silicon NPN Epitaxial NPN Transistor

Package: TO-220, 2-10R1A type

Manufacturer: Toshiba

Pinouts:

2SC3709 datasheet

 

Description

1. Low collector saturation voltage: VCE (sat) = 0.4 V (max)
2. High-speed switching: tstg = 1.0 μs (typ.)
3. Complementary to 2SA1451A

Absolute Maximum Ratings

1. Collector-Base Voltage: Vceo = 60 V
2. Collector-Emitter Voltage: Vceo = 50 V
3. Emitter-Base Voltage: Vebo = 6 V
4. Collector Current: Ic = 12 A
5. Base Current : Ib = 2 A
6. Collector Power Dissipation ( Tc = 25’C ) : Pc = 30 W

[ … ]

 

Applications

1. High Current Switching
Other data sheets are available within the file: C3709, C3709A, 2SC3709A

2SC3709 Datasheet PDF Download

2SC3709 pdf

Toshiba
2SC3709A-Y
Power Bipolar Transistor, 12A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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