2SD2092 PDF – Vcbo=100V, NPN Transistor – Toshiba

ApplicationsThis post explains for the transistor.

The Part Number is 2SD2092.

The function of this semiconductor is NPN EPITAXIAL TYPE Transistor.

The package is TO-220 Type

Manufacturer: Toshiba Semiconductor

Preview images :

2SD2092 pinout datasheet


The 2SD2092 is 100V, 3A, Silicon NPN epitaxial transistor. A silicon NPN epitaxial transistor refers to a specific type of NPN (Negative-Positive-Negative) bipolar junction transistor (BJT) that is fabricated using silicon as the semiconductor material and employs an epitaxial growth process in its construction.

Epitaxy is a semiconductor manufacturing technique that involves depositing a thin layer of semiconductor material onto a substrate to create specific electrical properties and performance characteristics. In the case of a silicon NPN epitaxial transistor, the epitaxial layer is grown on top of the base region of the transistor, resulting in improved performance compared to a standard diffused-base transistor.

Silicon NPN epitaxial transistors are widely used in various electronic applications, including amplifiers, switching circuits, voltage regulators, and other analog and digital circuits. They offer improved performance characteristics such as higher current gain, lower saturation voltage, and enhanced high-frequency response compared to standard diffused-base transistors.


2SD2092 pdf

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 100 V
2. Collector to Emitter Voltage: Vceo = 100 V
3. Emitter to Base Voltage: Vebo = 7 V
4. Collector Current: Ic = 3 A
5. Collector Dissipation: Pc = 2 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C




2SD2092 Datasheet