Part Number: 2SJ180
Function: -30V, ± 1A, P-Channel MOSFET
Manufacturer: NEC => Renesas Technology
Image and Pinouts:
Description
The 2SJ180, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5V power source.
As the MOS FET has low on-state resistance and excellent switching characteristtics, it is suitable for driving actuators such as motors, relays, and solenoids.
Features
1. Directly driven by ICs having a 5 V power supply.
2. Low On-state resistance
3. Bidirectional zener diode for protection is incorporated in between the gate and the source.
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = – 30 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = ± 1 A
4. Total Power Dissipation: Pd = 1 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Other data sheets are available within the file: J180
2SJ180 Datasheet PDF Download
