2SK2610 MOSFET – 900V, 5A, Transistor ( Datasheet PDF )

Part Number: 2SK2610

Function: Silicon N Channel MOS Type FET

Manufacturer: Toshiba

Image and Pinouts:
2SK2610 datasheet

Description

This is Silicon N Channel MOS Type Field Effect Transistor.

Features

1. Low drain−source ON resistance  : RDS (ON)= 2.3 Ω(typ.)

2. High forward transfer admittance  : |Yfs|=4.4 S (typ.)

3. Low leakage current  : IDSS= 100 µA (max) (VDS= 720 V)

4. Enhancement−mode : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1mA)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 900 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 5 A

4. Drain Power Dissipation: Pd = 150 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

2SK2610 Datasheet PDF Download


2SK2610 pdf

Other data sheets are available within the file: 2SK-2610, K2610