2SK2611 Datasheet PDF – 900V, 9A, MOSFET, Transistor

Part Number: 2SK2611

Function: 900V, 9A, Silicon N-Channel MOSFET

Package: TO-3P Type

Manufacturer: Toshiba

Image

2SK2611 datasheet pdf

Description

The 2SK2611 is a high-voltage 900V N-channel enhancement-mode MOSFET designed for demanding power switching applications, typically available in a TO-3P or TO-247 package. It offers low on-resistance, high forward transfer admittance, and low leakage current, ensuring efficient operation in high-voltage environments. This device is widely used in DC-DC converters, motor drives, and high-power switching circuits.

Features

  • Low drain-source on-resistance with RDS(on)=1.2Ω (typ.)
  • High forward transfer admittance |Yfs|=7.0S (typ.)
  • Low leakage current with IDSS=100µA (max)
  • High voltage capability up to 900V
  • Enhancement-mode operation with Vth=2.0–4.0V
  • Suitable for high-power and high-voltage switching

Pinout

2SK2611 datasheet

Absolute Maximum Ratings (Tc = 25 °C)

Parameter Symbol Value Unit
Drain-Source Voltage VDSS 900 V
Gate-Source Voltage VGSS ±30 V
Drain Current ID 9 A
Power Dissipation Pd 150 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg -55 to 150 °C

Design Notes

  • Ensure sufficient gate drive voltage for full enhancement and low RDS(on)
  • Use proper heat sinking due to high power dissipation capability
  • Implement snubber or clamp circuits for inductive switching loads
  • Gate resistor recommended to control switching speed and reduce EMI
  • Verify safe operating area (SOA) during transient conditions

Typical Circuit Usage

  • High-voltage DC-DC converter switching stages
  • Motor drive and actuator control circuits
  • Relay driver circuits in industrial systems
  • Switch-mode power supplies (SMPS)
  • Power switching in high-voltage applications

How to Choose This Part

  • Select for high-voltage applications up to 900V
  • Suitable for moderate-to-high current switching up to 9A
  • Ensure RDS(on) meets efficiency requirements
  • Confirm thermal management strategy for high-power use
  • Use when robust switching and reliability are critical

Applications

  • DC-DC converters
  • Relay drive circuits
  • Motor drive systems
  • Industrial power supplies
  • High-voltage switching applications

Alternative / Equivalent Products

  • 2SK2610 (similar high-voltage MOSFET)
  • IRFPG50 (high-voltage MOSFET alternative)
  • STW9NK90Z (STMicroelectronics 900V MOSFET)
  • FQA9N90 (ON Semiconductor equivalent)
  • 2SK3563 (comparable N-channel MOSFET)

2SK2611 Datasheet PDF Download


2SK2611 pdf

Other data sheets are available within the file: K2611

Toshiba
2SK2611
TRANSISTOR 9 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-16C1B, SC-65, 3 PIN, FET General Purpose...
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