2SK3561 Datasheet PDF- N-ch, MOSFET, 500V, 8A – Toshiba

Part Number: 2SK3561

Function: N-Channel MOSFET ( Vdss, Vdgr = 500V, Pd = 40W )

Package: TO-220 Type

Manufacturer: Toshiba

Image:
2sk3561-mosfet

Description

The 2SK3561 is a N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba.

The K3561 has a maximum drain-source voltage of 500V and a maximum drain current of 8A,
making it suitable for high voltage, high current applications.

Features :

1. Low drain-source ON resistance: RDS (ON)= 0.75 Ω(typ.)

2. High forward transfer admittance: | Yfs | = 6.5 S (typ.)

3. Low leakage current: IDSS= 100 μA (VDS= 500 V)

4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Pinout

2sk3561-datasheet-pinout

 

Absolute Maximum Ratings ( Ta = 25°C )

1. Drain-source voltage: VDSS = 500 V

2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 500 V

3. Gate-source voltage: VGSS = ±30 V

4. Drain current (DC): Id = 8A

5. Drain power dissipation (Tc = 25°C): PD = 40 W

Applications:

1. Switching Regulator

2SK3561 Datasheet PDF

 

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