Part Number: 2SK3639
Function: 20V, 64A, SWITCHING N-CHANNEL POWER MOSFET
Package: TO-252 Type
Manufacturer: NEC ( Renesas Technology )
Image and Pinouts:
Description
The 2SK3639 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
Features
1. Low on-state resistance :
(1) RDS(on)1 = 5.5 mΩ MAX. (VGS = 10 V, ID = 32 A)
(2) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 32 A)
2. Low Ciss: Ciss = 2400 pF TYP.
Absolute Maximum Ratings ( Ta = 25°C )
1. Drain to Source Voltage (VGS = 0 V) : VDSS = 20 V
2. Gate to Source Voltage (VDS = 0 V) : VGSS = ±20 V
3. Drain Current (DC) (Tc = 25°C) : ID(DC) = ±64 A
4. Drain Current (pulse) Note : ID(pulse) = ±256 A
5. Total Power Dissipation (Tc = 25°C) : PT1 = 40 W
6. Total Power Dissipation : PT2 = 1.0 W
Other data sheets are available within the file: 2SK3639ZK, K3639, K3639-ZK
2SK3639 Datasheet PDF Download
