Part Number: 2SK3918
Function: 48A, 25V, N-CHANNEL POWER MOSFET
Package: TO-251 Type
Manufacturer: NEC ( Renesas Technology )
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Description
The 2SK3918 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
Features
1. Low on-state resistance : RDS(on)1= 7.5 mΩ MAX. (VGS= 10 V, ID= 24 A)
2. Low Ciss : Ciss= 1300 pF TYP.
3. 5 V drive available
Absolute maximum ratings ( Ta = 25°C )
1. Drain to Source Voltage (VGS = 0 V) : VDSS = 25 V
2. Gate to Source Voltage (VDS = 0 V) : VGSS = ±20 V
3. Drain Current (DC) (TC = 25°C) : ID(DC) = ±48 A
4. Drain Current (pulse) : ID(pulse) = ±192 A
5. Total Power Dissipation (TC = 25°C) : PT1 = 29 W
6. Total Power Dissipation : PT2 = 1.0 W
7. Channel Temperature : Tch = 150 °C
8. Storage Temperature : Tstg = -55 to +150 °C
9. Single Avalanche Current : IAS = 22 A
10. Single Avalanche Energy : EAS = 48 mJ
Other data sheets are available within the file: 2SK3918-ZK, K3918, K3918-ZK
2SK3918 Datasheet PDF Download
