Part Number: 30F121, GT30F121
Function: 300V, 120A, IGBT
Package: TO-220SIS Type
Manufacturer: Toshiba
Image :
Description
The 30F121 is 300V, 120A, IGBT. IGBT is Insulated Gate Bipolar Transistor.
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow. When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.
The IGBT has several advantages over traditional power semiconductors, such as bipolar transistors and MOSFETs, making it a popular choice for high-power applications. These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.
Features of the Toshiba Discrete IGBTs
1. IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
advantage of high-voltage drive.
2. The conductivity modulation characteristics of a bipolar transistor make it ideal for load control
applications that require high breakdown voltage and high current.
3. Toshiba offers a family of fast switching IGBTs, which are low injection and recombination in the
carrier.
30F121 Data :
The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in
inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible
power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.
(1) IGBTs also featuring fast switching
(2) Low collector-emitter saturation voltage even in the large current area
(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications
(4) High input impedance allows voltage drives
(5) Available in a variety of packages
Pinouts:
Plasma Display :
Previously, MOSFETs were used for the power supplies of plasma display panels (PDPs). Recently, however, MOSFETs are being replaced by IGBTs, which have lower VCE(sat)in a large current area.
Applications:
1. Plasma Display Panel
30F121 PDF Datasheet
Other data sheets are available within the file: 35F121, 30F122, GT30F121
