33N25T Datasheet PDF – 250V, 33A, N-Ch, MOSFET

Part Number: 33N25T

Function: 250V, 33A, N-Ch, MOSFET (Transistor)

Package: TO-220, TO-220F Type

Manufacturer: Fairchild Semiconductor


33N25T datasheet



These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.


1. 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V

2. Low gate charge ( typical 36.8 nC)

3. Low Crss ( typical 39 pF)

4. Fast switching

5. Improved dv/dt capability




Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 250 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 132 A

4. Power Dissipation: Pd = 37 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C



2. Lighting

3. Uninterruptible Power Supply

4. AC-DC Power Supply


Other data sheets are available within the file: FDP33N25, FDPF33N25T, FDPF33N25TRDTU


33N25T Datasheet PDF Download

33N25T pdf