Part Number: 3DD13009
Function: 400V, NPN Transistor
Package: TO-220 Type
Manufacturer: LGE
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Description
This is 400V, 12A, NPN Transistor.
1. BASE TO-220 2. COLLECTOR Features 3 2 1 power switching applications 3. EMITTER
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 700 V
2. Collector to Emitter Voltage: Vceo = 400 V
3. Emitter to Base Voltage: Vebo = 9 V
4. Collector Current: Ic = 12 A
5. Collector Dissipation : Pc = 2 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Fall time Storage time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT tf ts Test conditions IC =1mA, IE=0 IC=10mA, IB=0 IE= 1mA, IC=0 VCB=700V,IE=0 VCE=400V,IB=0 VEB=9V, IC=0 VCE=5V, IC=3A IC=8A,IB=1.6A IC=8A, IB=1.6A VCE=10V,Ic=500mA, f =1MHz IC=8A, IB1=-IB2=1.6A VCC=125V MIN TYP MAX UNIT 700 V 400 V 9V 100 µA 100 µA 100 µA 8 40 1.5 V 1.6 V 4 MHz 0.9 µs 4 µs CLASSIFICATION OF hFE Rank Range 8-15 15-20 20-25 25-30 30-35 35-40 Typical Characteristics 3DD13009(NPN) TO-220 Transistor […]
3DD13009 Datasheet
