Part Number: 3DD2553
Function: 8A, 600V, Silicon NPN Transistor
Package: TO-3P(H)IS Type
Manufacturer: Jilin Sino-Microelectronics
Image and Pinouts:
Description
The 3DD2553 is high breakdown voltage of NPN bipolar transistor. The main process of manufacture : high voltage mesa type process, triple diffused process etc., adoption of fully plastic packge. RoHS product.
Absolute maximum ratings ( Tc = 25°C )
1. Collector-Base Voltage: Vcbo = 1700 V
2. Collector-Emitter Voltage: Vceo = 600 V
3. Emitter-Base Voltage: Vebo = 6 V
4. Collector Current: Ic = 8 A
5. Base Current : Ib = 4 A
6. Collector Power Dissipation : Pc = 50 W
7. Max. Junction Temperature: Tj = 150 °C
8. Stroage Temperature Range : Tstg = -55 ~ +50°C
Applications:
1. Horizontal deflection output for color TV.
Other data sheets are available within the file: 3DD2553O-A-N-D, D2553
3DD2553 Datasheet PDF Download
