This is a kind of MOSFET.
Part Number: 4407A, AO4407A
Function: 30V, 12A, P-Channel MOSFET
Package: SOIC-8 Type
Manufacturer: Alpha and Omega Semiconductor
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Description
The 4407A uses advanced trench technology to provide excellent R DS(ON) , and ultra-low low gate charge with a 25V gate rating. This device is suitable foruse as a load switch or in PWM applications.
The AO4407A is a P-channel power MOSFET in an 8-pin SOIC package, optimized for high-efficiency load switching and DC-DC conversion. It uses advanced trench MOSFET technology to achieve very low RDS(ON) and low gate charge, making it highly suitable for battery-powered and power management applications.
Pinout
Product Summary (Ta = 25°C)
1. Drain-Source Voltage : VDS = -30V
2. Continuous Drain Current : ID = -12A (VGS = -20V)
3. RDS(ON) < 11mΩ (VGS = -20V)
4. RDS(ON) < 13mΩ (VGS = -10V)
5. RDS(ON) < 17mΩ (VGS = -6V)
6. Power Dissipation: Pd = 3.1 W
7. Junction Temperature: Tj = 150°C
8. Storage Temperature: Tsg = -55 ~ +150°C
Design Notes (Critical Points)
- Ensure sufficient negative VGS for full enhancement
- Use gate resistor to control switching speed and ringing
- Provide adequate PCB copper for thermal dissipation
- Check SOA (Safe Operating Area) for high current pulses
- Consider paralleling devices for higher current applications
Typical Applications
- High-side load switch
- Battery protection circuits
- DC-DC buck/boost converters (as high-side switch)
- Power path control (adapter ↔ battery selection)
- Hot-swap and power OR-ing circuits
Alternative / Equivalent Products
- IRF7416 (P-channel MOSFET)
- Si4435DY
- FDN306P (lower current applications)
- AO4409 (higher performance variant)
Other data sheets are available within the file: AO4407A
4407A Datasheet PDF Download
