50JR22 Datasheet - N-Ch, 600V, 50A, IGBT, GT50JR22 ( PDF )

This is one of the IGBT types.

The IGBT is insulated-gate bipolar transistor.

Part Number: 50JR22, GT50JR22

Function: 600V, 50A, IGBT

Package: TO-3P(N)

Manufacturer: Toshiba

50JR22 IGBT Image

Description

This is Silicon N-Channel, 600V, 50A, IGBT.

Features

1. 6.5th generation

2. The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip.

3. Enhancement mode

4. High-speed switching
(1) IGBT : tf = 0.05 μs (typ.) (IC = 50 A)
(2) FWD : trr = 0.35 μs (typ.) (IF = 15 A)

5. Low saturation voltage : VCE(sat) = 1.55 V (typ.) (IC = 50 A)

6. High junction temperature : Tj = 175 (max)

50JR22 Pinout

Absolute maximum ratings ( Ta=25°C )

1. Collector-emitter voltage: Vces = 600 V
2. Gate-emitter voltage: Vges = ± 25 V
3. Collector current (DC) : Ic = 50 A
4. Diode forward current (DC) : If = 40 A
5. Diode forward current (100 μs) : Ifp = 100 A
6. Collector power dissipation : Pc = 230 W
7. Junction temperature : Tj = 175 °C
8. Storage temperature: Tstg : -55 to 175 °C

Applications

1. Dedicated to Current-Resonant Inverter Switching.