Part Number: 7MBR75U4B120
Function: 1200V, 75A, IGBT, Power Integrated Module
Package: Module Type
Manufacturer: Fuji Electric
Images:
Description
7MBR75U4B120 is 1200V, 75A, IGBT, Power Integrated Module.
IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).
They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.
When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.
These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to Emitter Voltage: Vces = 1200 V
2. Gate to Emitter Voltage: VGes = ± 20 V
3. Collector Current: Ic = 75 A
4. Collector power dissipation: Pc = 275 W
5. Junction Temperature: Tj = 150 °C
6. Storage temperature: Tstg = -40 to +125 °C
Block diagram
7MBR75U4B120 Datasheet
