7N60B Datasheet – 600V, 7A, N-Ch, MOSFET (Transistor)

What is 7N60B?

This is a type of MOSFET (metal-oxide-semiconductor field-effect transistor) that is designed for use in high-power switching applications. It has a maximum drain-source voltage rating of 600 volts and a continuous drain current rating of 7 amperes. The MOSFET has a low on-resistance and fast switching speed, making it suitable for use in power supply, motor control, and lighting applications.

Part Number: SSP7N60B

Function: 600V, N-Channel MOSFET (Transistor)

Package: TO-220 Type

Manufacturer: Chongqing Pingwei , Fairchild


7N60B datasheet transistor


These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies


7N60B Pinout

7N60B mosfet pinout


1. 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V
2. Low gate charge ( typical 38 nC)
3. Low Crss ( typical 23 pF)
4. Fast switching
5. 100% avalanche tested
6. Improved dv/dt capability
7. TO-220F package isolation = 4.0kV


1. Low on-resistance:
The MOSFET has a low on-resistance, which means it can handle high currents with low power dissipation and achieve low voltage drops across the device.

2. Fast switching speed:
It has a fast switching speed, which makes it suitable for use in high-frequency switching applications.


Other data sheets are available within the file: SSP7N60B

7N60B Datasheet