9T16GH Datasheet – 20V, 25A, Power MOSFET, AP9T16GH

Part Number: 9T16GH, AP9T16GH

Function: 20V, 25A, N-Channel Enhacement Mode Power MOSFET

Package: TO-252(H), TO-251(J)

Manufacturer: Advanced Power Electronics


9T16GH datasheet pdf



9T16GH is 20V, 25A, Power MOSFET. An N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.

In an N-channel enhancement mode MOSFET, the conductive channel is formed by applying a positive voltage to the gate terminal, which creates an electric field that attracts negatively charged electrons from the source region to the channel region. This increases the conductivity of the channel and allows current to flow between the source and drain terminals.

One of the key advantages of an N-channel enhancement mode MOSFET is its ability to operate with very low voltage and power levels, which makes it well-suited for use in battery-powered devices. It also has a high input impedance, which makes it compatible with digital logic circuits and other low-power devices.

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.


1. Low Gate Charge

2. Capable of 2.5V gate drive

3. Single Drive Requirement

4. RoHS Compliant


9T16GH pinout mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 20 V

2. Gate to source voltage: VGSS = ± 16 V

3. Drain current: ID = 25 A

4. Total Power Dissipation: Pd = 25 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

9T16GH Datasheet