Part Number: BD140
Function: -100V, PNP power transistor
Package: TO-126, SOT32 type
Manufacturer: NXP
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Description
The BD140 is PNP power transistor in a TO-126; SOT32 plastic package.
NPN complements: BD135, BD137 and BD139.
Features
• High current (max. 1.5 A) • Low voltage (max. 80 V). Applications • General purpose power applications, e.g. driver stages in hi-fi amplifiers and television circuits. Description PNP power transistor in a TO-126; SOT32 plastic package. NPN complements: BD135, BD137 and BD139. 3 PINNING PIN 1 2 BD136; BD138; BD140 Description emitter collector, connected to metal part of mounting surface base handbook, halfpage 2 3 1 1 2 3 Top view MAM272 Fig.1 Simplified outline (TO-126; SOT32) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BD136 BD138 BD140 VCEO collector-emitter voltage BD136 BD138 BD140 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction MAX. UNIT 1999 Apr 12 2 Philips Semiconductors Product specification PNP power transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb Note 1. Refer to TO-126 (SOT32) standard mounting conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = −30 V PARAMETER thermal resistance from junction to ambient thermal resistance from junction to mounting base BD136; BD138; BD140 CONDITIONS note 1 saturation voltage base-emitter voltage transition frequency DC current gain ratio of the complementary pairs IC = −500 mA; IB = −50 mA IC = −500 mA; VCE = −2 V IC = −50 mA; VCE Product specification PNP power transistors BD136; BD138; BD140 handbook, full pagewidth 160 MBH730 hFE 120 VCE = −2 V 80 40 0 −10−1 −1 −10 −102 −103 IC (mA) −104 Fig.2 DC current gain; typical values. 1999 Apr 12 4 […]
BD140 Datasheet
