D1303 PDF – 20V, 0.3A, NPN Transistor, TO-92S

Part Number: D1303

Function: 20V, 0.3A, NPN Transistor

Package: TO-92S Type

Manufacturer: FGX


1 page
D1303 image


This is NPN Silicon Transistor.  APPLICATION:Audio Muting Applications. D1303 —NPN Silicon—  MAXIMUM RATINGS(Ta=25℃) PARAMETER SYMBOL RATING UNIT Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector Power Dissipation VCBO VCEO VEBO Ic Ib Pc 25 V 20 V 12 V 0.3 A 0.03 A 0.4 W Junction Temperature Storage Temperature Range Tj 150 ℃ Tstg -55~150 ℃  ELECTRICAL CHARACTERISTICS(Ta=25℃,RG=10%) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION Collector-Base Breakdown Voltage BVcbo 25 V Ic=10uA Ie=0 Collector-Emitter Breakdown Voltage BVceo 20 V Ic=1mA Ib=0 Emitter-Base Breakdown Voltage BVebo 12 V Ie=10uA Ic=0 Collector Cut-off Current Icbo 0.1 uA Vcb=25V Ie=0 Emitter Cut-off Current Iebo 0.1 uA Veb=12V Ic=0 Base-Emitter Saturation Voltage Vbe(sat) 1 V Ic=0.1A Ib=10mA Collector-Emitter Saturation Voltage Vce(sat) 0.25 V Ic=0.1A Ib=1mA DC Current Gain Gain bandwidth product hFE 200 800 , Vce=2V Ic=4mA fT 60 MHz Vce=10V Ic=1mA Common Base Output Capacitance Cob 10 pF Vcb=10V Ie=0 f=1MHz  hFE Classification And Marking Mark D1303 Classification hFE 200~800 […]

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 25 V

2. Collector to Emitter Voltage: Vceo = 20 V

3. Emitter to Base Voltage: Vebo = 12 V

4. Collector Current: Ic = 0.3 A

5. Collector Dissipation : Pc = 0.4 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C


D1303 Datasheet