A 600V IGBT (Insulated Gate Bipolar Transistor) is a type of power semiconductor device used for switching and amplifying electrical signals in various applications, particularly in power electronics and motor control systems.
IGBTs are widely used in industrial and commercial applications where high voltage and current levels are involved. They offer advantages such as fast switching speeds, high power handling capabilities, and low conduction losses. The combination of the voltage rating and IGBT technology allows for efficient power control and conversion in various systems.
Part Number: G30N60, HGTG30N60
Function: 600V, IGBT, Transistor
Package: TO-247 Type
Manufacturer: Fairchild, Micross componets
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Description
The G30N60 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
HGTG30N60A4 Data Sheet August 2003 File Number 4829 600V, SMPS Series N-Channel IGBT The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49343. Features • >100kHz Operation at 390V, 30A • 200kHz Operation at 390V, 18A • 600V Switching SOA Capability • Typical Fall Time. 60ns at TJ = 125oC • Low Conduction Loss Ordering Information PART NUMBER HGTG30N60A4 NOTE: PACKAGE TO-247 BRAND G30N60A4 Packaging JEDEC STYLE TO-247 When ordering, use the entire part number. E C G Symbol C COLLECTOR G (BACK METAL) E FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S.
Absolute Maximum Ratings Collector to Emitter Voltage BVCES Collector Current Continuous At TC = 25oC . IC25 At TC = 110oC . IC110 Collector Current Pulsed (Note 1) ICM Gate to Emitter Voltage Continuous. VGES Gate to Emitter Voltage Pulsed VGEM Switching Safe Operating Area at TJ = 150oC, Figure 2 . SSOA Power Dissipation Total at TC = 25oC . PD Power Dissipation Derating TC > 25oC . Operating and Storage Junction Temperature Range .TJ, TSTG Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. TL Package Body for 10s, See Techbrief 334 TPKG 600 75 60 240 ±20 ±30 150A at 600V 463 3.7 -55 to 150 300 260 CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the de […]
G30N60 PDF Datasheet
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