This post explains for the MOSFET.
The Part Number is IRFB31N20D, B31N20D.
The function of this semiconductor is 200V, 31A, HEXFET Power MOSFET.
The package is TO-220AB, D2Pak, TO-262.
Manufacturer: International Rectifier
Preview images :
Description
B31N20D is 200V, 31A, HEXFET Power MOSFET. A HEXFET (High-Efficiency eXpansion-Fairchild Epi-Process Transistor) is a specific brand and technology of power MOSFET developed by International Rectifier (now part of Infineon Technologies). The term “HEXFET” has been widely used to refer to power MOSFETs that incorporate certain design features for high efficiency and performance in power electronics applications.
1. High-Efficiency Design: HEXFET MOSFETs are designed with a focus on high efficiency, which means they aim to minimize power losses and heat generation during operation. This is particularly important in applications where power conversion efficiency is crucial, such as power supplies and motor drives.
2. Low On-Resistance: One of the primary design goals of HEXFETs is to have low on-resistance (RDS(on)). Low on-resistance reduces the voltage drop across the MOSFET when it’s conducting current, leading to lower power losses and improved efficiency.
3. Fast Switching Speed: HEXFETs often have fast switching speeds, allowing them to transition between on and off states quickly. This characteristic is essential in applications where rapid switching is required to minimize switching losses.
Benefits :
1. Low Gate-to-Drain Charge to Reduce Switching Losses
2. Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
3. Fully Characterized Avalanche Voltage IRFB31N20D and Current
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 200 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 31 A
4. Power Dissipation: Pd = 3.1 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +175 °C
Applications:
1. High frequency DC-DC converters